By Peter W. Hawkes (Ed.)
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Extra info for Advances in Electronics and Electron Physics, Vol. 70
The local perturbation of the junction by the electron beam is expected to change the critical current density J1(x,y)by the amount SJ, in the irradiated region. If the phase-difference function #(x, y) were to remain unaffected, the measured beam-induced change of the junction critical current as a function of the beam position yo would be given by m Y 0 ) = SJ,(YO) * 6Y * w sin #(Yo) (27) Here and in the following, for simplicity, we assume a one-dimensional geometry, restricting any spatial dependence to the y-direction and ignoring in-line geometry overlap geometry FIG.
Of course, from these latter experiments the value of the Josephson penetration depth ;1 can be obtained. The evolution of the different vortex states in an increasing magnetic field parallel to the junction barrier (Bosch, 1986) can be seen in Fig. 15. Here the sample geometry is similar to that of Figs. 13 and 14, with a sapphire substrate and Nb groundplane covered by a SiO insulating film. The base electrode is a PbIn film of 109 nm thickness and the top electrode a PbBi film of 250 nm SCANNING ELECTRON MICROSCOPY AT VERY LOW TEMPERATURES 25 + I Magnetic Field [mAl Generating Current IF 0 Be f 100 JJA 3 50pA 91 pm __* Y FIG.
Earlier summaries of these results can be found in Huebener (1984), Bosch et al. (1986), Huebener and Seifert (1984), and Huebener (1985). The beam-induced voltage signal 6 V ( x ,y) is generated in the following way (Seifert, Huebener and Epperlein, 1983). We consider a planar tunnel junction of total area A . Focusing the electron beam on the coordinate point x, y on the junction surface, results in the thermal perturbation of the area nA2 around this point. Usually the radius A can be identified with the thermal healing length of Eq.