By Steve, C. Cripps, Steve C. Cripps, Steve C. Cripps
The writer is a professional in RF amplifiers. during this publication he expands upon the guidelines offered in his earlier publication which was once a most sensible vendor.
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Additional resources for Advanced Techniques in RF Power Amplifier Design
Efficiencies are not plotted at this juncture; until some more specific details are established about the implementation of the two amplifiers, it is not strictly possible to derive an efficiency curve. It is another focus of the present analysis to explore a wider range of possibilities, rather than just following the conventional assumption that the main device is an ideal Class B PA. Any attempt to realize such a configuration runs into an immediate problem with the defined characteristics of the peaking PA.
In practice, both values will be subject to some optimization. The main objective in this Doherty and Chireix 39 treatment of the subject is to show that useful Doherty action can be obtained for quite a wide range of real device characteristics, some of which do not even closely approach the ideal models chosen in this simplest and classical analysis. 2 shows the results of the above analysis, in terms of the voltages and currents at each device. The key feature is the maintenance of a constant voltage swing at the main device in the upper regime.
11 has some interesting implications for the future of RF power bipolars. 4. FETs, however, do not fare so well in this analysis. An FET will usually display a closer approximation to a dogleg characteristic; this is a natural outcome of their modus operandi, coupled with some misdirected beliefs on the part of manufacturers as to what constitutes a good device characteristic. 10, having linear transconductance with a short turn-on region. 9, for sinusoidal voltage input. Conventional Class B using linear device is shown dotted.